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Numéro de référence | KTD2061 | ||
Description | EPITAXIAL PLANAR NPN TRANSISTOR | ||
Fabricant | KEC | ||
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1 Page
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION
TV, MONITOR VERTICAL OUTPUT APPLICATION
DRIVER STAGE APPLICATION
COROR TV CLASS B SOUND OUTPUT APPLICATION
FEATURES
High Breakdown Voltage : VCEO=180V(Min.)
High Transition Frequency : fT=100MHz(Typ.)
High Current : IC(max)=2A.
Complementary to KTB1369.
KTD2061
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
200
180
5
2
0.2
20
150
-55 150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE
Transition Frequency
fT
Note : hFE Classification O:70 140 , Y:120 240
TEST CONDITION
VCB=200V, IE=0
VEB=5V, IC=0
IC=10mA, IB=0
VCE=10V, IC=400mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=10V, IC=400mA
MIN.
-
-
180
70
-
-
-
TYP.
-
-
-
-
-
-
100
MAX.
1.0
1.0
-
240
1.0
1.0
-
UNIT
A
A
V
V
V
MHz
2015. 7. 10
Revision No : 5
1/2
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Pages | Pages 2 | ||
Télécharger | [ KTD2061 ] |
No | Description détaillée | Fabricant |
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