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PDF STP33N10 Data sheet ( Hoja de datos )
| Número de pieza | STP33N10 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
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STP33N10
STP33N10FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP33N10
STP33N10FI
VDSS
100 V
100 V
R DS( on)
< 0.06 Ω
< 0.06 Ω
ID
33 A
18 A
s TYPICAL RDS(on) = 0.045 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S
VDG R
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
ID M(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at T c = 25 oC
Drain Current (continuous) at T c = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1993
Val ue
STP33N10
ST P3 3N 10 F I
100
100
± 20
33 18
23 12
132 132
150 45
1 0.3
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
1 page  
Transconductance
STP33N10/FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STP33N10.PDF ] | |
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