|
|
Numéro de référence | B5817W | ||
Description | SCHOTTKY BARRIER DIODE | ||
Fabricant | WEJ | ||
Logo | |||
1 Page
RoHS
B5817W
B5817W SCHOTTKY BARRIER DIODE
FEATURES
DPower dissipation
PD : 450 mW Tamb=25
TCollector current
.,LIF: 1 A
Collector-base voltage
VR: 20 V
Operating and storage junction temperature range
OTJ Tstg: -55 to +150
CMARKING SJ
Unit mm
ICELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
ONParameter
Reverse breakdown voltage
RReverse voltage leakage current
TForward voltage
WEJ ELECDiodecapacitance
Symbol
Test conditions
V(BR)
IR
VF
CD
IR= 1mA
VR=20V
IF=1A
IF=3A
VR=4V
f=1MHz
MIN
MAX
UNIT
20
1
0.45
0.75
120
V
V
|
|||
Pages | Pages 3 | ||
Télécharger | [ B5817W ] |
No | Description détaillée | Fabricant |
B5817W | SCHOTTKY BARRIER DIODE | JCET |
B5817W | SCHOTTKY DIODE | Unisonic Technologies |
B5817W | SCHOTTKY DIODE | Shunye |
B5817W | Schottky Diode | Taiwan Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |