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WEJ - SCHOTTKY BARRIER DIODE

Numéro de référence B5817W
Description SCHOTTKY BARRIER DIODE
Fabricant WEJ 
Logo WEJ 





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B5817W fiche technique
RoHS
B5817W
B5817W SCHOTTKY BARRIER DIODE
FEATURES
DPower dissipation
PD : 450 mW Tamb=25
TCollector current
.,LIF: 1 A
Collector-base voltage
VR: 20 V
Operating and storage junction temperature range
OTJ Tstg: -55 to +150
CMARKING SJ
Unit mm
ICELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
ONParameter
Reverse breakdown voltage
RReverse voltage leakage current
TForward voltage
WEJ ELECDiodecapacitance
Symbol
Test conditions
V(BR)
IR
VF
CD
IR= 1mA
VR=20V
IF=1A
IF=3A
VR=4V
f=1MHz
MIN
MAX
UNIT
20
1
0.45
0.75
120
V
V
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]

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