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Numéro de référence | B5818WS | ||
Description | Schottky Barrier Diode | ||
Fabricant | MDD | ||
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1 Page
B5817WS-B5819WS
Schottky Barrier Diode
FEATURES
z Extremely low VF
z Low stored change,majority carrier
conduction
z Low power loss/high efficient
Pb
Lead-free
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters
z Free Wheeling, And Polarity Protection Applications
SOD-323
ORDERING INFORMATION
Type No.
Marking
B5817WS
B5818WS
B5819WS
SJ
SK
SL
Package Code
SOD-323
SOD-323
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
symbol B5817WS B5818WS B5819WS Unit
Non-Repetitive Peak reverse voltage
VRM
20
30
40
V
Peak repetitive Peak reverse voltage
VRRM
Working Peak Reverse voltage
VRWM
20
30
40
V
DC Reverse Voltage
VR
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified output Current
Io 1
A
Peak forward surge current@=8.3ms
IFSM
20
A
Power Dissipation
Pd 235
mW
Thermal Resistance Junction to Ambient RθJA
426
℃/W
Storage temperature
TSTG
-55 to +150
℃
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Pages | Pages 4 | ||
Télécharger | [ B5818WS ] |
No | Description détaillée | Fabricant |
B5818W | SCHOTTKY BARRIER DIODE | JCET |
B5818W | SCHOTTKY DIODE | Shunye |
B5818W | Schottky Diode | Taiwan Semiconductor |
B5818W | Schottky Barrier Diode | LGE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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