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RB551V-30 fiches techniques PDF

SEMTECH - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Numéro de référence RB551V-30
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Fabricant SEMTECH 
Logo SEMTECH 





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RB551V-30 fiche technique
RB551V-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Ultra low VF
• High reliability
Applications
• High frequency rectification switching regulation
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
12
SA
Top View
Marking Code: "SA"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
at IF = 500 mA
Reverse Current
at VR = 20 V
Note: ESD sensitive product handling required.
Symbol
VRM
VR
IO
IFSM
Tj
Ts
Value
30
20
0.5
2
125
- 40 to + 125
Unit
V
V
A
A
OC
OC
Symbol
VF
IR
Max.
0.36
0.47
100
Unit
V
µA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006

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