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KO3407 fiches techniques PDF

Kexin - P-Channel Enhancement MOSFET

Numéro de référence KO3407
Description P-Channel Enhancement MOSFET
Fabricant Kexin 
Logo Kexin 





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KO3407 fiche technique
SMD Type
P-Channel Enhancement MOSFET
AO3407 (KO3407)
MOSFEITC
Features
VDS (V) = -30V
ID = -4.1 A
RDS(ON) 52m
RDS(ON) 87m
(VGS = -10V)
(VGS = -4.5V)
D
G
S
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
11.. BGasaete
22..ESmiotutrecre
33..cDolrlaeicntor
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Ta = 25
Ta = 70
Pulsed Drain Current
Power Dissipation
Ta = 25
Ta = 70
Thermal Resistance.Junction- to-Ambient t 10s
Steady State
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJL
TJ
Tstg
Rating
-30
±20
-4.1
-3.5
-20
1.4
1
90
125
60
150
-55 to 150
Unit
V
A
W
/W
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