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MDF9N50B fiches techniques PDF

MagnaChip - N-Channel MOSFET

Numéro de référence MDF9N50B
Description N-Channel MOSFET
Fabricant MagnaChip 
Logo MagnaChip 





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MDF9N50B fiche technique
MDP9N50B / MDF9N50B
N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description
The MDP/F9N50B uses advanced Magnachips
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDP/F9N50B is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 500V
ID = 9.0A
@VGS = 10V
RDS(ON) ≤ 0.85@VGS = 10V
Applications
Power Supply
PFC
Ballast
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP9N50B MDF9N50B
500
±30
9.0 9.0*
5.5 5.5*
36 36*
120 38
0.95 0.3
12
4.5
300
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec 2011. Version 1.0
Symbol
RθJA
RθJC
MDP9N50B
62.5
1.05
MDF9N50B
62.5
3.3
Unit
oC/W
1 MagnaChip Semiconductor Ltd.

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