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PDF BC857S Data sheet ( Hoja de datos )
| Número de pieza | BC857S | |
| Descripción | PNP Silicon Multi-Chip Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
BC857S
PNP Silicon
Multi-Chip Transistor
RoHS Compliant Product
* Features
Power dissipation
PCM : 0.3 W (Tamp.= 25OC)
Collector current
ICM : -0.2 A
Collector-base voltage
V(BR)CBO : -50 V
Operating & Storage junction Temperature
Tj, Tstg : -55OC~ +150 CO
C 1 B2 E2
.055(1.40)
.047(1.20)
SOT-363
.026TYP
(0.65TYP)
.021REF
(0.525)REF
8o
0o
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Marking : 3C
E 1 B1
C2
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
Ic=-10µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-10mA, IB=0
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IE=-10µA, IC=0
VCB=-30V, IE=0
DC current gain
hFE VCE=-5V, IC=-2mA
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
IC=-10mA, IB=-0.5mA
I C=-100mA, IB=-5mA
Base-emitter voltage
Transition frequency
VBE
VBE(1)
fT
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-10mA , f=100MHz
Collector output capacitance
Noise figure
Cob VCB=-10V, IE=0, f=1MHz
VCE=-5V, IC=-0.2mA
NF F=1kHZ, RS=2K ,BW=200HZ
Note: 1 Short duration test pulse used to minimize self-heating effect.
MIN TYP MAX UNIT
-50 V
-45 V
-5 V
-15 nA
125 630
-0.3 V
-0.65 V
-0.6 -0.75 V
-0.82 V
200 MHz
3.5 pF
2.5 dB
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC857S.PDF ] | |
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