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Thinki Semiconductor - N-Channel Trench Process Power MOSFET

Numéro de référence CS64N90
Description N-Channel Trench Process Power MOSFET
Fabricant Thinki Semiconductor 
Logo Thinki Semiconductor 





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CS64N90 fiche technique
CS64N90
®
Pb Free Plating Product
CS64N90
Pb
85V,92A N-Channel Trench Process Power MOSFET
General Description
CS64N90 series is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low RDS(ON) is suitable for PWM,
load switching especially for E-Bike controller applications.
Features
VDS=85V; ID=92A@ VGS=10V;
RDS(ON)<7.45mΩ @ VGS=10V
Special Designed for E-Bike Controller Application
Ultra Low On-Resistance
High UIS and UIS 100% Test
Application
64V E-Bike Controller Applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Inverter Application
Amplifier Application
CS64N90
(TO-220 HeatSink)
G DS
CS64N90F
(TO-220F FullPak)
Schematic Diagram
DS
G
VDS = 85 V
CS64N90B
(TO-263/D2PAK)
ID = 92A
D
S
G
RDS(ON) = 6.2 m
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD
EAS
TJ,TSTG
Maximum Power Dissipation(Tc=25)
Derating Factor
Single Pulse Avalanche Energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25,VDD=40V,VBGB=10V,RG=25Ω
Value
85
±25
92
64.4
368
30
139
0.93
625
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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