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PDF MS6N40 Data sheet ( Hoja de datos )
| Número de pieza | MS6N40 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Bruckewell | |
| Logotipo |  |
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MS6N40
N-Channel Enhancement Mode Power MOSFET
Description
The MS6N40 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=650V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Graphic symbol
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGS Gate to Source Voltage
Continuous Drain Current (TC=25°C)
ID
Continuous Drain Current (TC=100°C)
IDM Drain Current Pulsed
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
• Drain current limited by maximum junction temperature
Value
400
±30
5.5
3.5
16.4
240
10
5.5
Unit
V
V
A
A
mJ
mJ
V/ns
Publication Order Number: [MS6N40]
© Bruckewell Technology Corporation Rev. A -2014
1 page  
MS6N40
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MS6N40]
© Bruckewell Technology Corporation Rev. A -2014
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MS6N40.PDF ] | |
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