(PDF) MS9N20E Datasheet - Dual N-Channel MOSFET

Número de pieza	MS9N20E
Descripción	Dual N-Channel MOSFET
Fabricantes	Bruckewell
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No Preview Available ! MS9N20E Dual N-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe • DFN2X5 6PP saves board space • Fast switching speed • High performance trench technology Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS9N20E] © Bruckewell Technology Corporation Rev. A -2014 1 page MS9N20E Dual N-Channel 20-V (D-S) MOSFET ■Characteristics Curve FIG.7-SOURCE-DRAIN DIODE FORWARD VOLTAGE FIG.8-ON-RESISTANCE VS. GATE-TO-SOURCE VOLTAGE FIG.9-VTH GATE TO SOURCE VOLTAGE VS TEMPERATURE FIG.10-SINGLE PULSE POWER, JUNCTION-TO-AMBIENT FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT Publication Order Number: [MS9N20E] © Bruckewell Technology Corporation Rev. A -2014 5 Page

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PDF MS9N20E Data sheet ( Hoja de datos )