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PDF SGM2306 Data sheet ( Hoja de datos )
| Número de pieza | SGM2306 | |
| Descripción | N-Channel Enhancement Mode Power Mos.FET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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SGM2306
Elektronische Bauelemente
5.3A, 20V,RDS(ON) 32m
N-Channel Enhancement Mode Power Mos.FET
Description
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-89
The SGM2306 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.The SGM2306 is
universally used for all commercial-industrial applications.
Features
* Capable Of 2.5V Gate Drive
* Lower On-Resistance
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,3VGS@4.5V
Continuous Drain Current,3VGS@4.5V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5° TYP.
0.70 REF.
Symbol
VDS
VGS
ID@TA=25 oC
ID@TA=70 oC
IDM
PD@TA=25 oC
Tj, Tstg
Ratings
20
±12
5.3
4.3
10
1.5
0.012
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Max.
Symbol
Rthj-a
Ratings
83.3
Unit
oC /W
Any changing of specification will not be informed individual
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SGM2306.PDF ] | |
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