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SGM2310 fiches techniques PDF

SeCoS - N-Channel Enhancement Mode Power Mos.FET

Numéro de référence SGM2310
Description N-Channel Enhancement Mode Power Mos.FET
Fabricant SeCoS 
Logo SeCoS 





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SGM2310 fiche technique
Elektronische Bauelemente
SGM2310
3A, 60V,RDS(ON) 90m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
SOT-89
The SGM2310 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.The SGM2310 is
universally used for all commercial-industrial applications.
Features
* Small Package Outline
* Simple Drive Requirement
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,3VGS@4.5V
Continuous Drain Current,3VGS@4.5V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5° TYP.
0.70 REF.
Symbol
VDS
VGS
ID@TA=25 oC
ID@TA=70 oC
IDM
PD@TA=25 oC
Tj, Tstg
Ratings
60
±20
3.0
2.3
10
1.5
0.01
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Max.
Symbol
Rthj-a
Ratings
83.3
Unit
oC /W
Any changing of specification will not be informed individual
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