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PDF SKiiP703GD121-3DUW Data sheet ( Hoja de datos )
| Número de pieza | SKiiP703GD121-3DUW | |
| Descripción | IGBT POWER MODULE | |
| Fabricantes | Semikron | |
| Logotipo |  |
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SKiiP 703GD121-3DUW
I. Power section 1 * SKiiP703GB121CT per phase
Absolute maximum ratings
Symbol Conditions 1)
Values
IGBT and inverse diode
VCES
VCC Operating DC link voltage
VGES
IC IGBT, Theat sink = 25 / 70 °C
ICM IGBT, tp < 1 ms,Theat sink = 25°C
IF Diode, Theat sink = 25 / 70 °C
IFM Diode, tp < 1 ms
IFSM Diode, Tj = 150 °C, 10ms; sin
I2t (Diode) Diode, Tj = 150 °C, 10ms
Tj , (Tstg)
Visol AC, 1min.
IC-package4) Theat sink = 70°C, Tterm = 115 °C
1200
900
± 20
700 / 525
1400
525 / 393,75
900
4320
93
-40...+150 (125)
3000
1 * 500
Units
V
V
V
A
A
A
A
A
kA2s
°C
V
A
Characteristics
Symbol Conditions 1)
IGBT
V(BR)CES gate driver without supply
ICES
VGE = 0,
VCE = VCES
VCEO 7)
rT 7)
VCEsat 7)
VCEsat 7)
Tj = 125 °C
Tj = 125 °C
IC = 490A,
IC = 490A,
Eon + Eoff5)
IC=490A,
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
VCC=600V
VCC=900V
C per SKiiP, AC side
LCE top, bottom
RCC´-EE´ resistance, terminal-chip
Inverse diode 2)
VF = VEC IF= 450A;
Tj = 125 °C
VF= VEC IF= 450A;
Eon + Eoff5) IF= 450A;
Tj = 25 °C
Tj = 125 °C
VTO Tj = 125 °C
rT Tj = 125 °C
Thermal characteristics
Rthjs per IGBT
Rthjs
Rthsa3)
per diode
L: P16 heat sink; 280 m3/ h
W: WK 40; 8l/min; 50% glycol
Current sensor
Ip RMS
Ta=100° C , Vsupply = ± 15V
Ipmax RMS t ≤ 2 s
Linearity Vsupply ≥ ±14,25V, 0≤I≤ ± 700A,
per sensor
Ippeak
t ≤ 10 µs, per sensor
Mechanical data
M1 DC terminals, SI Units
M2 AC terminals, SI Units
M3 to heat sink 6)
min.
≥VCES
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
4
8
−
typ.
−
1,2
36
0,9
2,71
2,3
−
172
279
1
10
0,40
1,8
−
18
1,0
1,83
−
−
−
−
1 * 400
1 * 500
0,1
± 3000
−
−
3
max.
−
−
−
−
−
−
2
−
−
−
−
2,5
−
−
−
0,047
0,092
0,033
0,010
6
10
−
Units
V
mA
mA
V
mΩ
V
V
mJ
mJ
nF
nH
mΩ
V
V
mJ
V
mΩ
°C/W
°C/W
°C/W
°C/W
A
A
%
A
Nm
Nm
Nm
SKiiPPACK
SK integrated intelligent
Power PACK
3rd Generation
6-pack
SKiiP 703GD121-3DUW 3)
Target data
housing S33
Features
• SKiiP technology inside
- pressure contact of ceramic
to heat sink; low thermal
impedance
- pressure contact of main
electric terminals
- pressure contact of auxiliary
electric terminals
- increased thermal cycling
capability
- low stray inductance
- homogenous current
distribution
• integrated current sensor
• integrated temperature sensor
• high power density
1) Theatsink = 25 °C, unless
otherwise specified
2) CAL = Controlled Axial Lifetime
Technology (soft and fast)
3) D integrated gate driver
U with DC-bus voltage
measurement (option for GB)
L mounted on standard P16 for
forced air cooling
W mounted on standard water
cooler
4) Tterm = temperature of terminal
5) with SKiiPPACK 3rd generation
gate driver
6) assembly instruction must be
followed
7) measured at chip level
8) external paralleling necessary
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,
expressed or implied is made regarding delivery, performance or suitability.
by SEMIKRON
000911
B 7 − 11
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| PDF Descargar | [ Datasheet SKiiP703GD121-3DUW.PDF ] | |
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