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FGA30S120P fiches techniques PDF

Fairchild Semiconductor - IGBT

Numéro de référence FGA30S120P
Description IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGA30S120P fiche technique
FGA30S120P
Shorted AnodeTM IGBT
Features
• High speed switching
• Low saturation voltage: VCE(sat) =1.75V @ IC = 30A
• High input impedance
• RoHS compliant
Applications
• Induction Heating and Microwave Oven
• Soft Switching Applications
October 2012
General Description
Using advanced Field Stop Trench and Shorted Anode technol-
ogy, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior
conduction and switching performances, and easy parallel oper-
ation with exceptional avalanche capability. This device is
designed for induction heating and microwave oven.
C
GCE
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM (1)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Limited by Tjmax
G
E
Ratings
1300
±25
60
30
150
60
30
348
174
-55 to +175
-55 to +175
300
Typ.
--
--
Max.
0.43
40
Units
V
V
A
A
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2012 Fairchild Semiconductor Corporation
FGA30S120P Rev. C1
1
www.fairchildsemi.com

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