DataSheetWiki


FJP2160D fiches techniques PDF

Fairchild Semiconductor - NPN Silicon Transistor

Numéro de référence FJP2160D
Description NPN Silicon Transistor
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





1 Page

No Preview Available !





FJP2160D fiche technique
FJP2160D
ESBCTM Rated NPN Silicon Transistor
May 2012
Applications
• High Voltage and High Speed Power Switch
Application
• Emitter-Switched Bipolar/MOSFET Cascode
Application (ESBCTM)
• Smart Meter, Smart Breakers,
HV Industrial Power Supplies
• Motor Driver and Ignition Driver
ESBC Features (FDC655 MOSFET)
VCS(ON)
0.131 V
IC
0.5 A
Equiv RCS(ON)
0.261 Ω ∗
• Low Equivalent On Resistance
• Very Fast Switch : 150KHz
• Squared RBSOA : Up to 1600Volts
• Avalanche Rated
• Low Driving Capacitance, no Miller Capacitance
(Typ 12pF Cap @ 200volts)
• Low Switching Losses
• Reliable HV switch : No False Triggering due to
High dv/dt Transients.
Description
The FJP2160D is a low-cost, high performance power
switch designed to provide the best performance when
used in an ESBCTM configuration in applications such as:
power supplies, motor drivers, Smart Grid, or ignition
switches. The power switch is designed to operate up to
1600 volts and up to 3amps while providing exceptionally
low on-resistance and very low switching losses.
The ESBCTM switch is designed to be easy to drive using
off-the-shelf power supply controllers or drivers. The
ESBCTM MOSFET is a low-voltage, low-cost, surface
mount device that combines low-input capacitance and
fast switching, The ESBCTM configuration further mini-
mizes the required driving power because it does not
have Miller capacitance.
The FJP2160D provides exceptional reliability and a
large operating range due to its square reverse-bias-safe-
operating-area (RBSOA) and rugged design. The device
is avalanche rated and has no parasitic transistors so is
not prone to static dv/dt failures.
1 TO-220
1.Base 2.Collector 3.Emitter
C (2)
(1)
B
E (3)
C
B FJP2160D
FDC655
G
S
Figure 1. Pin Configuration Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration**
Ordering Information
Part Number
Marking
Package
FJP2160DTU
J2160D
TO-220
* Figure of Merit
** Other Fairchild MOSFETs can be used in this ESBC application.
Packing Method
TUBE
Remarks
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
1
www.fairchildsemi.com

PagesPages 12
Télécharger [ FJP2160D ]


Fiche technique recommandé

No Description détaillée Fabricant
FJP2160D NPN Silicon Transistor Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche