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PDF RT8207M Data sheet ( Hoja de datos )
| Número de pieza | RT8207M | |
| Descripción | Complete DDRII/DDRIII/Low-Power DDRIII/DDRIV Memory Power Supply Controller | |
| Fabricantes | Richtek | |
| Logotipo |  |
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®
RT8207L/M
Complete DDRII/DDRIII/Low-Power DDRIII/DDRIV Memory
Power Supply Controller
General Description
The RT8207L/M provides a complete power supply for both
DDRII/DDRIII/Low-Power DDRIII/DDRIV memory systems.
It integrates a synchronous PWM buck controller with a
1.5A sink/source tracking linear regulator and buffered low
noise reference.
The PWM controller provides the high efficiency, excellent
transient response, and high DC output accuracy needed
for stepping down high voltage batteries to generate low
voltage chipset RAM supplies in notebook computers.
The constant-on-time PWM control scheme handles wide
input/output voltage ratios with ease and provides 100ns
“instant-on” response to load transients while maintaining
a relatively constant switching frequency.
The RT8207L/M achieves high efficiency at a reduced cost
by eliminating the current sense resistor found in
traditional current mode PWMs. Efficiency is further
enhanced by its ability to drive very large synchronous
rectifier MOSFETs. The buck conversion allows this device
to directly step down high voltage batteries for the highest
possible efficiency.
The 1.5A sink/source LDO maintains fast transient
response, only requiring 20μF of ceramic output
capacitance. In addition, the LDO supply input is available
externally to significantly reduce the total power losses.
The RT8207L/M supports all of the sleep state controls
placing VTT at high-Z in S3 and discharging VDDQ, VTT
and VTTREF (soft-off) in S4/S5.
The RT8207L/M has all of the protection features including
thermal shutdown and is available in WQFN-24L 4x4 and
WQFN-20L 3x3 packages.
Features
PWM Controller
Resistor Programmable Current Limit by Low Side
RDS(ON) Sense
Quick Load Step Response Within 100ns
1% VVDDQ Accuracy Over Line and Load
Fixed 1.8V (DDRII), 1.5V (DDRIII) or Adjustable
0.75V to 3.3V Output Range for 1.35V (Low-Power
DDRIII) and 1.2V (DDRIV)
4.5V to 26V Battery Input Range
Resistor Programmable Frequency
Over/Under Voltage Protection
Internal Current Limit Ramp Soft-Start
Drives Large Synchronous-Rectifier FETs
Power Good Indicator
1.5A LDO (VTT), Buffered Reference (VTTREF)
Capable to Sink and Source 1.5A
External Input Available to Minimize Power Losses
Integrated Divider Tracks 1/2 VDDQ for Both VTT
and VTTREF
Buffered Low Noise 10mA VTTREF Output
Remote Sensing (VTTSNS)
±20mV Accuracy for Both VTTREF and VTT
Supports High-Z in S3 and Soft-Off in S4/S5
RoHS Compliant and Halogen Free
Applications
DDRI/II/III/Low-Power DDRIII/DDRIV Memory Power
Supplies
Notebook Computers
SSTL18, SSTL15 and HSTL Bus Termination
Copyright ©2014 Richtek Technology Corporation. All rights reserved.
DS8207L/M-07 April 2014
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
1
1 page  
RT8207L/M
Functional Pin Description
Pin No.
Pin Name
WQFN-24L 4x4 WQFN-20L 3x3
Pin Function
1 1 VTTGND Power Ground Output for VTT LDO.
2 2 VTTSNS
3, 3,
25 (Exposed Pad) 21 (Exposed Pad)
GND
4 -- MODE
5 4 VTTREF
Voltage Sense Input for VTT LDO. Connect to the terminal of
the VTT LDO output capacitor.
Analog Ground. The exposed pad must be soldered to a large
PCB and connected to GND for maximum thermal dissipation.
Output Discharge Mode Setting. Connect to VDDQ for tracking
discharge. Connect to GND for non-tracking discharge.
Connect to VDD for no discharge.
Buffered Reference Output.
6, 7, 17
8
-- NC No Internal Connection.
Reference Input for VTT and VTTREF. Discharge current
5
VDDQ
sinking terminal for VDDQ non-tracking discharge. Output
voltage feedback input for VDDQ output if the FB pin is
connected to VDD or GND.
VDDQ Output Setting. Connect to GND for DDR3 (VVDDQ =
9
6
FB
1.5V) power supply. Connect to VDD for DDR2 (VVDDQ = 1.8V)
power supply. Or connect to a resistive voltage divider from
VDDQ to GND to adjust the output of PWM from 0.75V to 3.3V.
10
7 S3
S3 Signal Input.
11
8 S5
S5 Signal Input
Set the UGATE on time through a pull-up resistor connecting to
12
9
TON
VIN. Output discharge mode setting pin for RT8207M. Connect
RTON to VIN for non-tracking discharge.
13
10
PGOOD
Power Good Open Drain Output. In High state when VDDQ
output voltage is within the target range.
14
11
VDD
Supply Input for Analog Supply.
15
12
VDDP
Supply Input for LGATE Gate Driver.
16
13 CS
Current Limit Threshold Setting Input. Connect to VDD through
the voltage setting resistor.
18
14
PGND
Power Ground for Low Side MOSFET.
19
15
LGATE
Low Side Gate Driver Output for VDDQ.
Switch Node. External inductor connection for VDDQ and
20 16 PHASE behave as the current sense comparator input for Low Side
MOSFET RDS(ON) sensing.
21 17 UGATE High Side Gate Driver Output for VDDQ.
22
18
BOOT
Boost Flying Capacitor Connection for VDDQ.
23 19 VLDOIN Power Supply for VTT LDO.
24 20 VTT Power Output for VTT LDO.
Copyright ©2014 Richtek Technology Corporation. All rights reserved.
DS8207L/M-07 April 2014
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
5
5 Page 
RT8207L/M
Parameter
Symbol
Test Conditions
Min Typ Max Unit
VTTREF Output Voltage
VDDQSNS/2, VTTREF
Output Voltage Tolerance
VTTREF Source Current
Limit
VVTTREF
VVTTREF
VVDDQ
2
VVTTREFTOL
VLDOIN = VVDDQ = 1.5V,
IVTTREF <10mA
VLDOIN = VVDDQ = 1.8V,
IVTTREF <10mA
IVTTREFOCL VVTTREF = 0V
-- 0.9/0.75 --
V
15 -- 15
mV
18 -- 18
10 40 80 mA
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only, and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions may affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright ©2014 Richtek Technology Corporation. All rights reserved.
DS8207L/M-07 April 2014
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
11
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| Páginas | Total 27 Páginas | |
| PDF Descargar | [ Datasheet RT8207M.PDF ] | |
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