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AP4961GM fiches techniques PDF

Advanced Power Electronics - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP4961GM
Description DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP4961GM fiche technique
Advanced Power
Electronics Corp.
AP4961GM
RoHS-compliant Product
DUAL P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Lower On-resistance
Simple Drive Requirement
Dual P MOSFET Package
D2
D2
D1
D1
SO-8
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
G2
S2
G1
S1
G1
BVDSS
RDS(ON)
ID
D1
G2
S1
-20V
28mΩ
-7A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
+8
-7
-5.5
-20
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201101192

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