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PDF AP5523GM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP5523GM-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP5523GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Performance
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP5523 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
S1
100V
260mΩ
2A
-100V
160mΩ
-2.5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
100 -100
+20 +20
2.0 -2.5
1.5 -2.0
8 -10
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201310041
1 page  
N-Channel
8
ID=2A
V DS = 50 V
6
4
2
0
012345
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
10
Operation in this
area limited by
RDS(ON)
1
100us
1ms
10ms
0.1
100ms
1s
0.01
DC
T A =25 o C
Single Pulse
0.001
0.01 0.1
1
10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
8
V DS =5V
6
4
T j =150 o C
2
T j =25 o C
T j = -40 o C
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
AP5523GM-HF
f=1.0MHz
400
300
C200
iss
100
C oss
C0
1 21 41 61 81 101 rss 121
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
Single Pulse
0.01
30
0.001
0.0001
0.001
-30
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP5523GM-HF.PDF ] | |
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