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PDF AP5600N Data sheet ( Hoja de datos )

Número de pieza AP5600N
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP5600N Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP5600N
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Capable of 2.5V Gate Drive
Fast Switching Characteristic
D
Low Gate Charge
RoHS Compliant & Halogen-Free
S
SOT-23 G
Description
AP5600 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The special design SOT-23 package with good thermal
performance is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
BVDSS
RDS(ON)
ID
50V
160mΩ
2.1A
D
G
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
50 V
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 4.5V3
Drain Current, VGS @ 4.5V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+12
2.1
1.7
10
1.38
-55 to 150
-55 to 150
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
90
Unit
/W
1
201504071

1 page




AP5600N pdf
AP5600N
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
200
T j =25 o C
160
2.5V
.120 V GS =4.5V
80
2
1.5
1
0.5
0
0 50 100
T A , Ambient Temperature( o C)
Fig 14. Total Power Dissipation
150
40
0 3 6 9 12
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5

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