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Número de pieza | MMBT7002 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | SEMTECH | |
Logotipo | ||
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N-Channel Enhancement Mode Field Effect Transistor
Features
• High density cell design for low RDS(ON)
• Voltage controlled small signal switching
• High saturation current capability
• High speed switching
Gate
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGS ≤ 1MΩ)
Gate-Source Voltage
-Continuous
-Non Repetitive (tp < 50 µs)
Maximum Drain Current -Continuous
-Pulsed
Total Power Dissipation
Operating and Storage Temperature Range
Drain
Source
Symbol
VDSS
VDGR
VGSS
ID
Ptot
TJ, Ts
1.Gate 2.Source 3.Drain
SOT-23 Plastic Package
Value
60
60
± 20
± 40
115
800
200
- 55 to + 150
Unit
V
V
V
mA
mW
OC
Characteristics at Ta = 25 OC
Parameter
Drain Source Breakdown Voltage
at ID = 10 µA
Zero Gate Voltage Drain Current
at VDS = 60 V
Gate-Body Leakage Current
at VGS = ± 20 V
Gate Threshold Voltage
at VDS = VGS, ID = 250 µA
On-State Drain Current
at VGS = 10 V, VDS = 7.5 V
Drain-Source On-Voltage
at VGS = 10 V, ID = 500 mA
at VGS = 5 V, ID = 50 mA
Static Drain-Source On-Resistance
at VGS = 10 V, ID = 500 mA
Forward Transconductance
at VDS = 10 V, ID = 200 mA
Input Capacitance
at VDS = 25 V, f = 1 MHz
Output Capacitance
at VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
at VDS = 25 V, f = 1 MHz
Turn-On Time
at VDD = 30 V, RL= 150 Ω, ID = 0.2 A, VGS = 10V, RGEN = 25Ω
Turn-Off Time
at VDD = 30 V, RL= 150 Ω, ID = 0.2 A, VGS = 10V, RGEN = 25Ω
Symbol
BVDSS
IDSS
±IGSS
VGS(th)
ID(ON)
VDS(ON)
RDS(ON)
gFS
Ciss
Coss
Crss
ton
toff
Min.
60
-
-
1
500
-
-
-
80
-
-
-
-
-
Max.
-
1
100
2.5
-
3.75
1.5
7.5
-
50
25
5
20
20
Unit
V
µA
nA
V
mA
V
V
Ω
mS
pF
pF
pF
ns
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 25/12/2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MMBT7002.PDF ] |
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