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SSF6NS70UG fiches techniques PDF

SILIKRON - N-Channel MOSFET

Numéro de référence SSF6NS70UG
Description N-Channel MOSFET
Fabricant SILIKRON 
Logo SILIKRON 





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SSF6NS70UG fiche technique
Main Product Characteristics:
VDSS
RDS(on)
700V
0.95Ω (typ.)
ID 6A
Features and Benefits:
TO-251 (IPAK)
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
SSF6NS70UG
Marking and pin
Assignment
Schematic diagram
Description:
The SSF6NS70UG series MOSFETs is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low Rdson, energy saving,
high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
6
3.7
18
33
0.264
700
± 30
72
1.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.02.25
www.silikron.com
Version : 1.0
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