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PDF SSF7N65F Data sheet ( Hoja de datos )

Número de pieza SSF7N65F
Descripción N-Channel MOSFET
Fabricantes SILIKRON 
Logotipo SILIKRON Logotipo



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No Preview Available ! SSF7N65F Hoja de datos, Descripción, Manual

Main Product Characteristics:
VDSS
RDS(on)
650V
1.26Ω (typ.)
ID 7A
Features and Benefits:
TO220F
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SSF7N65F
Marking and pin
Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=10mH
Avalanche Current @ L=10mH
Operating Junction and Storage Temperature Range
Max.
7
4.4
28
52
0.42
650
± 30
353
8.4
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.04.25
www.silikron.com
Version : 1.2
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SSF7N65F pdf
Typical electrical and thermal characteristics
SSF7N65F
Figure 5. Maximum Drain Current Vs. Case
Temperature
Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.04.25
www.silikron.com
Version : 1.2
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