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SSF7NS70UGX fiches techniques PDF

SILIKRON - N-Channel MOSFET

Numéro de référence SSF7NS70UGX
Description N-Channel MOSFET
Fabricant SILIKRON 
Logo SILIKRON 





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SSF7NS70UGX fiche technique
Main Product Characteristics:
VDSS
RDS(on)
700V
0.7Ω (typ.)
ID 7A
Features and Benefits:
IPAK-NX
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
SSF7NS70UGX
Marking and Pin
Assignment
Schematic Diagram
Description:
The SSF7NS70UGX series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute Max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
7
4.3
21
41
0.33
700
± 30
112
1.5
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2014.02.08
www.silikron.com
Version : 1.1
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