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SSF8N65 Datasheet دیتاشیت PDF دانلود

دیتاشیت - SILIKRON - N-Channel MOSFET

شماره قطعه SSF8N65
شرح مفصل N-Channel MOSFET
تولید کننده SILIKRON 
آرم SILIKRON 


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SSF8N65 شرح
SSF8N65
Features
Extremely high dv/dt capability
Low Gate Charge Qg results in Simple Drive Requirement
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Description
The SSF8N65 is a new generation of high voltage
NChannel enhancement mode power MOSFETs and is
obtained through an extreme optimization layout design, in
additional to pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability, provide
superior switching performance, withstand high energy pulse in
the avalanche, and increases packing density.
Application
High current, high speed switching
Ideal for off-line power supply, adaptor, PFC
VDSS = 650V
ID = 8A
Rdson = 0.95Ω (typ.)
SSF8N65 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC
ID@Tc=100ْC
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current
PD@TC=25ْC
Power Dissipation
Linear derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
8.2
5.5
32.8
145
0.8
±30
586
4
15
4.5
55 to +150
Thermal Resistance
RθJC
RθCS
Parameter
Junction-to-case
Case-to-Sink,Flat,Greased Surface
Min.
Typ. Max.
0.86
0.50
RθJA
Junction-to-Ambient
— — 62.5
Units
A
W
W/ Cْ
V
mJ
A
mJ
V/ns
ْC
Units
ْC/W
©Silikron Semiconductor Corporation
2010.1.10
Version: 1.0
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