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PDF SSF8NP60U Data sheet ( Hoja de datos )
| Número de pieza | SSF8NP60U | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SILIKRON | |
| Logotipo |  |
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Main Product Characteristics:
VDSS
RDS(on)
ID
600V
0.73Ω (typ.)
8A ①
Features and Benefits:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
TO-220
SSF8NP60U
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application (adaptor, lighting, charger etc.) and a wide variety of other
applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.5mH
Avalanche Current @ L=22.5mH
Operating Junction and Storage Temperature Range
Max.
8①
4.9 ①
32
62.5
0.5
600
± 30
45
2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.08.12
www.silikron.com
Version : 1.0
page 1 of 8
1 page  
Typical electrical and thermal characteristics
SSF8NP60U
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage
Figure8. Maximum Effective Transient Thermal Impedance,
Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.08.12
www.silikron.com
Version : 1.0
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF8NP60U.PDF ] | |
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