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Numéro de référence | TDM3426 | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | Techcode | ||
Logo | |||
1 Page
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3426 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
RDS(ON) < 9.8mΩ @ VGS=4.5V
RDS(ON) < 7.2mΩ @ VGS=10V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
PWM applications
Load switch
Power management
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
Drain Current @ Continuous(Note 2)
VGS
ID(25℃)
ID(100℃)
Drain Current @ Current‐Pulsed (Note 1)
Maximum Power Dissipation (TA=25℃)
IDM
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction‐to‐Ambient (Note 2)
RθJA
DATASHEET
TDM3426
Limit
30
+20
15
12
60
3.5
‐55 To 150
35
Unit
V
V
A
A
A
W
℃
℃/W
November 18, 2014 Techcode Semiconductor Limited www.techcodesemi.com
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Pages | Pages 7 | ||
Télécharger | [ TDM3426 ] |
No | Description détaillée | Fabricant |
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