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TDM4953 fiches techniques PDF

Techcode - P-Channel Enhancement Mode MOSFET

Numéro de référence TDM4953
Description P-Channel Enhancement Mode MOSFET
Fabricant Techcode 
Logo Techcode 





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TDM4953 fiche technique
 
 
P-Channel Enhancement Mode Power MOSFET
 
Datasheet
TDM4953
DESCRIPTION
The TDM4953 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
VDS = -30V,ID = -5.1A
RDS(ON) < 85m@ VGS=-4.5V
RDS(ON) < 53m@ VGS=-10V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
D1 D2
G1 G2
S1 S2
Schematic diagram
Marking and pin Assignment
Application
PWM applications
Load switch
Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
TDM4953
TDM4953
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
-30
±20
-5.1
-20
2.5
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
50 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=-250μA
VDS=-24V,VGS=0V
Min Typ Max
-30
-1
October, 20, 2010.                                                           Techcode Semiconductor Limited                                       www.techcodesemi.com 
1 
Unit
V
μA

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