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PDF AP4455GYT-HF Data sheet ( Hoja de datos )

Número de pieza AP4455GYT-HF
Descripción P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP4455GYT-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
Simple Drive Requirement
Small Size & Lower Profile
RoHS Compliant & Halogen-Free
G
AP4455GYT-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
RDS(ON)
ID
-30V
21mΩ
-10.6A
Description
S
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The PMPAK® 3x3 package is special for DC-DC converters application
and lower 1.0mm profile with backside heat sink.
D
D
D
D
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-30
+20
-10.6
-8.5
-40
3.57
-55 to 150
-55 to 150
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
5
35
Unit
/W
/W
1
201501263AP

1 page




AP4455GYT-HF pdf
MARKING INFORMATION
4455GYT
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : YT
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
AP4455YT-HF
5

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