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Número de pieza | AP4500GM-HF | |
Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP4500GM-HF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP4500GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Performance
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP4500 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
20V
30mΩ
6A
-20V
50mΩ
-5A
D2
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
G1
G2
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
20 -20 V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Gate-Source Voltage
Drain Current, VGS @ 4.5V3
Drain Current, VGS @ 4.5V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+12 +12
6 -5
4.8 -4
20 -20
2.0
0.016
V
A
A
A
W
W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201501087
1 page N-Channel
12
ID=6A
V DS = 24 V
10
8
6
4
2
0
0 8 16 24 32
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10 Operation in this
area limited by
RDS(ON)
1
100us
1ms
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
AP4500GM-HF
f=1.0MHz
1000
C iss
C100
oss
C rss
10
1 5 9 13 17 21 25
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
30
Single Pulse
-30
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.01
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet AP4500GM-HF.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP4500GM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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