|
|
PDF AP4501AGEM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4501AGEM-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AP4501AGEM-HF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Advanced Power
Electronics Corp.
AP4501AGEM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
1 G2
S1
30V
20mΩ
8A
-30V
60mΩ
-4.6A
D2
S2
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -30
V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Gate-Source Voltage
Drain Current3 , VGS @ 10V
Drain Current3 , VGS @ 10V
Pulsed Drain Current1
+20 +20
8.0 -4.6
6.3 -3.7
20 -20
V
A
A
A
PD@TA=25℃
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
2
-55 to 150
-55 to 150
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201409263
1 page  
N-Channel
10
ID=8A
V DS = 15 V
8
6
4
2
0
0 3 6 9 12 15
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
AP4501AGEM-HF
1200 f=1.0MHz
1000
800
C iss
600
400
200
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10 Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
.
0.05
0.02
300.01
Single Pulse
-30
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.01
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
30
V DS =5V
20
10
T j =150 o C
T j =25 o C
T j =-40 o C
0
012345
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
10
8
6
4
2
0
25 50 75 100 125
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient
Temperature
150
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP4501AGEM-HF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP4501AGEM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |