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PDF AP4503BGM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4503BGM-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4503BGM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP4503B series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
S1
30V
18mΩ
8.2A
-30V
29mΩ
-6.6A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -30
V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Gate-Source Voltage
Drain Current3 , VGS @ 10V
Drain Current3 , VGS @ 10V
Pulsed Drain Current1
+20 +20
8.2 -6.6
6.6 -5.3
30 -30
V
A
A
A
PD@TA=25℃
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
2
-55 to 150
-55 to 150
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201501053
1 page  
N-Channel
10
8
I D= 8 A
V DS = 15 V
6
4
2
0
0 2 4 6 8 10 12
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1 1ms
10ms
100ms
0.1
T A =25 o C
Single Pulse
0.01
0.01
0.1
1
1s
DC
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
AP4503BGM-HF
f=1.0MHz
600
500
400
C iss
300
200
C100 oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 Single Pulse
30
0.001
0.0001
0.001
-30
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP4503BGM-HF.PDF ] | |
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