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PDF AP4503BGO-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4503BGO-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4503BGO-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
30V
23mΩ
6.3A
-30V
35mΩ
-5.2A
D2
G1 G2
S1
S2
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -30
V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20 +20
6.3 -5.2
5.0 -4.2
20 -20
1.38
-55 to 150
-55 to 150
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201501292
1 page  
N-Channel
10
8
ID=6A
V DS = 15 V
6
4
2
0
0 4 8 12 16
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
AP4503BGO-HF
f=1.0MHz
1000
800
600
C iss
400
200
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
Operation in this
10 area limited by
RDS(ON)
100us
1ms
1
10ms
0.1
T A =25 o C
Single Pulse
100ms
1s
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
. 0.01 Single Pulse
30
-30
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208oC/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
50
V DS =5V
40
30 T j =25 o C
T j =150 o
20
10
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP4503BGO-HF.PDF ] | |
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