|
|
PDF AP4509GM Data sheet ( Hoja de datos )
| Número de pieza | AP4509GM | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AP4509GM (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Advanced Power
Electronics Corp.
AP4509GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
D2
D2 D2
D1 D2
D1 D1
D1
SSOO--88
G2
S2G2
S1 SG11G1S2
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
G2
S1
30V
14mΩ
10A
-30V
20mΩ
-8.4A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
30 -30
+20 +20
10 -8.4
7.9 -6.7
30 -30
2.0
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201204033
1 page  
N-Channel
12
I D =9A
V DS =24V
10
8
6
4
2
0
0 10 20 30 40 50
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
10ms
1
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.1
1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
AP4509GM
f=1.0MHz
10000
C iss
1000
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.1
0.01
0.001
0.0001
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135oC/W
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP4509GM.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP4509GM | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP4509GM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |