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PDF FPD6836P70 Data sheet ( Hoja de datos )
| Número de pieza | FPD6836P70 | |
| Descripción | LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT | |
| Fabricantes | RFMD | |
| Logotipo |  |
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FPD6836P70
Low-Noise
High-Fre-
quency Pack-
aged pHEMT
FPD6836P70
LOW-NOISE HIGH-FREQUENCY PACKAGED
pHEMT
Package: P70
Product Description
The FPD6836P70 is a low parasitic, surface mountable packaged deple-
tion mode pseudomorphic High Electron Mobility Transistor (pHEMT) opti-
mised for low-noise, high-frequency applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
22dBm Output Power (P1dB)
15dB Gain at 5.8GHz
0.8dB Noise Figure at
5.8 GHz
32dB Output IP3 at 5.8GHz
45% Power-Added Efficiency
at 5.8GHz
Usable Gain to 18GHz
Applications
Gain blocks and medium
power stages
WiMax (2GHz to 11GHz)
WLAN 802.11a (5.8GHz)
Point-to-Point Radio (to
18 GHz)
Parameter
Specification
Min. Typ. Max.
Unit
P1dB at Gain Compression
Small-Signal Gain (SSG)
22
14 16
dBm
dB
PAE 45 %
Maximum Stable Gain (|S21/S12|)
15
12
Noise Figure (NF)
0.8 dB
OIP3
Saturated Drain-Source Current (IDSS)
Maximum Drain-Source Current
(IMAX)
Transconductance (GM)
90
32 dBm
105 135 mA
215 mA
140 ms
Gate-Source Leakage Current (IGSO)
1 10 μA
Pinch-Off Voltage (VP)
|0.7|
|1.0|
|1.3|
V
Gate-Source Breakdown Voltage
(VBDGS)
|12|
|14|
V
Gate-Drain Breakdown Voltage
(VBDGD)
|14.5|
|16|
V
Thermal Resistivity (θJC) *
275 °C/W
*Note: TAMBIENT=22°C, RF specification measured at f=5.8GHz using CW signal (except as noted).
Condition
VDS=5V, IDS=55mA
VDS=5V, IDS=55mA
VDS=5V, IDS=55mA, POUT=P1dB
VDS=5V, IDS=55mA, f=12GHz
VDS=5V, IDS=55mA, f=18GHz
VDS=5V, IDS=55mA
VDS=5V, IDS=55mA, POUT=10dBm SCL
VDS=1.3V, VGS=0V
VDS=1.3V, VGS=+1V
VDS=1.3V, VGS=0V
VGS = -5 V
VDS=1.3V, IDS=0.2mA
IGS = 0.36 mA
IGD = 0.36 mA
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10
1 page  
FPD6836P70
Parameter
Gain
P1dB
IP3
NF
S11
S22
VD
VG
ID
Reference Design (2.6GHz)
Typical
20
17
30
0.65
-4
-12
3
-0.4 to -0.6
50
Unit
dB
dBm
dBm
dB
V
V
mA
OIP3 measured at POUT of 6dBm per tone.
Evaluation Board Layout
Vg Vd
15pF
0.01uF
0.01uF
15pF
1. 0u F
P1 P2
15pF C1
L1
Q1
L2
C2
15pF
Component
Lg, Ld
L1
L2
C1, C2
15 pF x 4
0.01 µF x 4
1.0 µF
R1
P1, P2
Value
15 nH
2.2 nH
1.5 nH
0.5 pF
15 pF
0.01 µF
1.0 µF
20 Ω
Description
LQW18AN Murata chip inductor
LL1005FHL Toko chip inductor
LL1005FHL Toko chip inductor
ATC 600S Chip Capacitor
ATC 600S Chip Capacitor
ATC 0805X7R Chip Capacitor
B-Case Tantallum Chip Capacitor
0402 size chip resistor (100mW)
PCB Edge mount RF connector
Evaluation board material: 31mil thick FR4 with 1/2 ounce
Cu on both sides.
FPD6836P70 EVAL Board -Vg
Sc he mat ic
0.01uF
@ 2.6GHz
15pF
Vd
20 Ohm
15pF
RF IN
C1
15 nH 15 nH
L1
1.0uF
0. 01 u F
15pF
L2
C2
15pF
R F OU T
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD a(t+((1++)113))333633-666-7-66877-858-5-5575507700osraslseaaslle-esssu--spsupupopprpoto@rrtrt@f@mrrfdfmm.cddo.c.mcoomm.
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