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PDF FPD6836SOT343 Data sheet ( Hoja de datos )

Número de pieza FPD6836SOT343
Descripción HIGH LINEARITY PACKAGED PHEMT
Fabricantes Filtronic 
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PRELIMINARY
FPD6836SOT343
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
PERFORMANCE (1850 MHz)
0.5 dB Noise Figure
20 dBm Output Power (P1dB)
20 dB Small-Signal Gain (SSG)
32 dBm Output IP3
Evaluation Boards Available
DESCRIPTION AND APPLICATIONS
The FPD6836SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 360 µm Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD6836 is available in die form and in other
packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Minimum Noise Figure
NF
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 3.0 V; IDS = 50% IDSS
VDS = 3.0 V; IDS = 25% IDSS
VDS = 3.0 V; IDS = 50% IDSS
VDS = 3.0 V; IDS = 25% IDSS
Tuned for Optimum IP3
0.5
0.4
32
30
Small-Signal Gain
SSG
Power at 1dB Gain Compression
P1dB
VDS = 3.0 V; IDS = 50% IDSS
VDS = 3.0 V; IDS = 25% IDSS
VDS = 3.0 V; IDS = 50% IDSS
VDS = 3.0 V; IDS = 25% IDSS
18 20
18
18 20
18
Max
0.9
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75 mA
IGD = 0.75 mA
90 135
200
100
1 10
0.7 1.0 1.3
12 18
12 18
Units
dB
dBm
dB
dBm
mA
mA
mS
µA
V
V
V
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 09/15/05

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