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LGE - Fast Silicon Mesa Rectifiers

Numéro de référence BYV56B
Description Fast Silicon Mesa Rectifiers
Fabricant LGE 
Logo LGE 





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BYV56B fiche technique
BYV56 Series
Fast Silicon Mesa Rectifiers
Features
— Glass passivated junction
— Hermetically sealed package
— Low reverse current
— Soft recovery characteristics
Applications
Very fast rectifiers and switches
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
Average forward current
Junction and storage
temperature range
tp=10ms,
half sinewave
on PC board
l=10mm, TL=25°C
Type
BYT56A
BYT56B
BYT56D
BYT56G
BYT56J
BYT56K
BYT56M
Symbol
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
Value
50
100
200
400
600
800
1000
80
IFAV
IFAV
Tj=Tstg
1.5
3
–65...+175
Unit
V
V
V
V
V
V
V
A
A
A
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=10mm, TL=constant
on PC board with spacing 37.5mm
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
Reverse recovery time
IF=3A
VR=VRRM
VR=VRRM, Tj=150°C
IF=0.5A, IR=1A, iR=0.25A
Type
Symbol
RthJA
RthJA
Value
25
70
Unit
K/W
K/W
Symbol Min Typ Max Unit
VF 1.4 V
IR 5 mA
IR 150 mA
trr 100 ns

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