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TEMIC - Silicon Mesa Rectifiers

Numéro de référence BYW55
Description Silicon Mesa Rectifiers
Fabricant TEMIC 
Logo TEMIC 





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BYW55 fiche technique
Silicon Mesa Rectifiers
BYW52...BYW56
Features
D Controlled avalanche characteristics
D Glass passivated junction
D Hermetically sealed package
D Low reverse current
D High surge current loading
D Electrically equivalent diodes:
BYW52 – 1N5059 BYW53 – 1N5060
BYW54 – 1N5061 BYW55 – 1N5062
Applications
Rectifier, general purpose
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage, repetitive peak
reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Max. pulse energy in the
avalanche mode, non repetitive
(inductive load switch off)
i2* t–rating
Junction temperature
Storage temperature range
tp=10ms
ϕ=180°
tp=20ms half sinus
wave, Tj=175°C
I(BR)R=1A, Tj=175°C
Type
BYW52
BYW53
BYW54
BYW55
BYW56
Symbol
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
IFRM
IFAV
PR
ER
Value
200
400
600
800
1000
50
12
2
1000
20
Unit
V
V
V
V
V
A
A
A
W
mWs
i2*t 8 A2*s
Tj 175 °C
Tstg –55...+175 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=10mm, TL=constant
on PC board with spacing 25mm
Symbol
RthJA
RthJA
Value
45
100
Unit
K/W
K/W
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
1 (5)

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