(PDF) KDB2570 Datasheet - N-Channel PowerTrench MOSFET

Número de pieza	KDB2570
Descripción	N-Channel PowerTrench MOSFET
Fabricantes	Kexin
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No Preview Available ! SMD Type MOSFET 150V N-Channel PowerTrench MOSFET KDB2570(FDB2570) Features 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current-Continuous Drain current-Pulsed Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Thermal Resistance, Junction-to-Case Channel temperature Storage temperature Symbol VDSS VGSS ID IDP PD RèJA RèJC Tch Tstg Rating 150 20 22 50 93 0.63 62.5 1.6 175 -55 to +175 Unit V V A A W W/ /W /W www.kexin.com.cn 1 1 page

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PDF KDB2570 Data sheet ( Hoja de datos )