DataSheetWiki


FDB2670 fiches techniques PDF

Kexin - N-Channel PowerTrench MOSFET

Numéro de référence FDB2670
Description N-Channel PowerTrench MOSFET
Fabricant Kexin 
Logo Kexin 





1 Page

No Preview Available !





FDB2670 fiche technique
SMD Type
MOSFET
200V N-Channel PowerTrench MOSFET
KDB2670(FDB2670)
Features
19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V
Low gate charge (27 nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current-Continuous
Drain current-Pulsed
Power dissipation
Derate above 25
Peak Diode Recovery dv/dt
Thermal Resistance Junction to Ambient
Thermal Resistance, Junction-to-Case
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
dv/dt
RèJA
RèJC
Tch
Tstg
Rating
200
20
19
40
93
0.63
3.2
62.5
1.6
175
-65 to +175
Unit
V
V
A
A
W
W/
V/ns
/W
/W
www.kexin.com.cn 1

PagesPages 2
Télécharger [ FDB2670 ]


Fiche technique recommandé

No Description détaillée Fabricant
FDB2670 200V N-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor
FDB2670 N-Channel PowerTrench MOSFET Kexin
Kexin

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche