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Numéro de référence | KDB3682 | ||
Description | N-Channel PowerTrench MOSFET | ||
Fabricant | Kexin | ||
Logo | |||
SMD Type
MOSFET
N-Channel PowerTrench MOSFET
KDB3682 (FDB3682)
Features
rDS(ON) =32m (Typ.), VGS = 10V, ID =32A
Qg(tot) = 18.5nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current-Continuous TC=25
TA=25
Power dissipation
Derate above 25
Thermal Resistance Junction to Ambient
Thermal Resistance, Junction-to-Case
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
PD
RèJA
RèJC
Tch
Tstg
Rating
100
20
32
6
95
0.63
43
1.58
175
-55 to +175
Unit
V
V
A
A
W
W/
/W
/W
www.kexin.com.cn 1
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Pages | Pages 2 | ||
Télécharger | [ KDB3682 ] |
No | Description détaillée | Fabricant |
KDB3682 | N-Channel PowerTrench MOSFET | Kexin |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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