(PDF) KDB6030L Datasheet - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Número de pieza	KDB6030L
Descripción	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fabricantes	Kexin
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No Preview Available ! SMD Type TransistIoCrs N-Channel Logic Level Enhancement Mode Field Effect Transistor KDB6030L Features 52A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V RDS(ON) = 0.020 @ VGS = 4.5 V Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm 1.27+0.1 -0.1 0.1max 2.54 5.08+0.2 -0.2 +0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 11Ggaattee 22Ddrraaiinn 33Ssoouurrccee Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Drain Current Pulsed Power dissipation @ TC=25 Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Symbol VDSS VGS ID PD PD TJ, TSTG R JC R JA Rating 30 20 52 156 75 0.5 -65 to 175 2 62.5 Unit V V A A W W/ /W /W www.kexin.com.cn 1 1 page

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PDF KDB6030L Data sheet ( Hoja de datos )