|
|
PDF FDB42AN15A0_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDB42AN15A0_F085 | |
| Descripción | N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDB42AN15A0_F085 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
FDB42AN15A0_F085
N-Channel Power Trench® MOSFET
150V, 35A, 42mΩ
Features
Typ rDS(on) = 30mΩ at VGS = 10V, ID = 12A
Typ Qg(tot) = 78nC at VGS = 10V, ID = 12A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Integrated Starter/alternator
Primary Switch for 12V Systems
D
GS
TO-263
FDB SERIES
G
June 2013
D
S
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
150
±20
35
See Figure4
78
150
1.0
-55 to + 175
1.0
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
FDB42AN15A0 FDB42AN15A0_F085 D2-PAK(TO-263)
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Notes:
1: Current is limited by bondwire configuration.
32pm:r:oeRuSsnetθatnJirntAteigndisgshutTherJferae=csieu2sm5ob°faCotshf,eetLhdde=orjan0ui.nnm2cmpotiiuonHnns,t-.iItnAoRgS-cθo=aJnsC2ea8isAa1ng, iduVna2DcraDpasan=edte-1toeo0fd-0a2Vbmoyzdbducieeroinsnptiggptnehinrew.drmhuicaletlorRrecθshJisAatriasgnidnceegtewarnhmdeirnVeeDtdDhbe=yc0tahVseedutuhsreeinrrg'ms tabimloraeerfdienrdeaenvscaieglanins.cdhTeehfeinmedaxaismtuhme sroaltdinegr
©2013 Fairchild Semiconductor Corporation
FDB42AN15A0_F085 Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics
200
ID = 12A
160
TJ = 175oC
120
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
TJ = 25oC
80
40
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
10
2.8
PULSE DURATION = 80μs
2.4 DUTY CYCLE = 0.5% MAX
2.0
1.6
1.2
0.8
0.4
-80
ID = 12A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized Rdson vs Junction
Temperature
1.4
VGS = VDS
1.2 ID = 250μA
1.0
0.8
0.6
0.4
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
1.2
ID = 250uA
1.1
1.0
0.9
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
1000
100
Ciss
Coss
Crss
10
f = 1MHz
VGS = 0V
1
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs Drain to Source
Voltage
10
ID = 12A
8
VDD = 75V
6
VDD = 60V
VDD = 90V
4
2
0
0 5 10 15 20 25 30
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs Gate to Source
Voltage
FDB42AN15A0_F085 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDB42AN15A0_F085.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDB42AN15A0_F085 | N-Channel Power Trench MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |