(PDF) FDB4020P Datasheet - P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

Número de pieza	FDB4020P
Descripción	P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
Fabricantes	Kexin
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No Preview Available ! SMD Type MOSFET P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P(FDB4020P) Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V RDS(on) = 0.11 Ù @ VGS = -2.5 V. Critical DC electrical parameters specified at elevated temperature. High density cell design for extremely low RDS(on). TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current TC=25 Drain current-pulsed Power dissipation Derate above 25 Thermal Resistance, Junction-to- Case Thermal Resistance Junction to Ambient Channel temperature Storage temperature Symbol VDSS VGSS ID Idp PD RèJC RèJA Tch Tstg Rating -20 8 -16 -48 37.5 0.25 4 40 175 -55 to +175 Unit V V A A W W/ /W /W www.kexin.com.cn 1 1 page

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PDF FDB4020P Data sheet ( Hoja de datos )