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Microsemi - TVS Diode (Transient Voltage Suppressor)

Numéro de référence ICTE-45
Description TVS Diode (Transient Voltage Suppressor)
Fabricant Microsemi 
Logo Microsemi 





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ICTE-45 fiche technique
SCOTTSDALE DIVISION
ICTE-5 thru ICTE-45C, e3
TRANSIENT VOLTAGE SUPPRESSOR
DESCRIPTION
The ICTE-5 through ICTE-45C series of Transient Voltage
Suppressors (TVSs) are designed for the protection of integrated
circuits that require very low Clamping Voltages (VC) during a
transient threat. Due to their very fast response time, protection
level and high Peak Pulse Power (PPP) capability, they are extremely
effective in providing protection against line transients generated by:
voltage reversals, capacitive or inductive load switching,
electromechanical switching, electrostatic discharge and
electromagnetic coupling.
APPEARANCE
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
This series of TVS devices is designed to protect
Bipolar, MOS and Schottky improved integrated
circuits.
Transient protection for CMOS, MOS, Bipolar,
ICS (TTL, ECL, DTL, RTL and linear functions)
5.0 to 45 volts
Low clamping ratio
RoHS Compliant devices available by adding “e3”
suffix
APPLICATIONS / BENEFITS
These transient voltage suppressors are
designed for the protection of integrated
circuits. Characterized by a very low
clamping voltage together with a low standoff
voltage, they afford a high degree of
protection to: TTL, ECL, DTL, MOS, CMOS,
VMOS, HMOS, NMOS and static memory
circuits.
MAXIMUM RATINGS
1500 Watts of Peak Pulse Power (PPP)
dissipation at 25oC and 10x1000μs
tclamping (0 volts to V(BR) min):
<100 ps theoretical for unidirectional and <5 ns
for bidirectional
Operating and Storage temperatures: -65oC to
+150oC.
Forward surge rating: 200 amps, 1/120 second
at 25oC. (Applies to Unidirectional or single
direction only).
Steady State power dissipation: 5 watts.
Repetition rate (duty cycle): .05%
Clamping Factor: 1.33 @ Full rated power.
1.20 @ 50% rated power.
Clamping Factor: The ratio of the actual VC
(Clamping Voltage) to the actual V(BR)
(Breakdown Votlage) as measured on a
specific device.
MECHANICAL AND PACKAGING
CASE: Void-free, transfer molded
thermosetting epoxy body meeting UL94V-0
FINISH: Tin-lead or RoHS Compliant matte-
Tin plating solderable per MIL-STD-750,
method 2026
POLARITY: Cathode connected to case and
marked. Bidirectional not marked.
WEIGHT: 1.5 grams (approx.)
MOUNTING POSITION: Any
See package dimension on last page
Copyright © 2008
10-09-2008 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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