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Numéro de référence | PZT2907A | ||
Description | PNP Transistor | ||
Fabricant | WEJ | ||
Logo | |||
1 Page
RoHS
PZT2907A
PZT2907A TRANSISTOR (PNP)
SOT-223
FEATURES
DPower dissipation
TPCM: 1 W (Tamb=25℃)
Collector current
.,LICM: -0.6 A
Collector-base voltage
V(BR)CBO: -60
V
OOperating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
1. BASE
2. COLLECTOR
3. EMITTER
CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter
Collector-base breakdown voltage
NCollector-emitter breakdown voltage
Emitter-base breakdown voltage
OCollector cut-off current
Emitter cut-off current
TRDC current gain
ECCollector-emitter saturation voltage
LBase-emitter saturation voltage
ETransition frequency
Collector capacitance
JEmitter capacitance
Delay time
ERise time
WStorage time
Symbol Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cc
CE
td
tr
tS
Ic=-100µA,IE=0
Ic=-1mA,IB=0
IE=-100µA,IC=0
VCB=-50V,IE=0
VEB=-5V,IC=0
VCE=-10V,IC=-0.1mA
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-150mA
VCE=-10V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-20V,IC=-50mA,f=100MHz
VCB=-10V,IE=0,f=1MHz
VEB=-2V,IC=0,f=1MHz
IC=-150mA IB1=- IB2=- 15mA
MIN TYP MAX UNIT
-60 V
-60 V
-5 V
-10 nA
-50 nA
75
100
100
100 300
50
-0.4 V
-1.6 V
-1.3 V
-2.6 V
200 MHz
8 pF
30 pF
12 nS
30 nS
300 nS
Fall time
tf
65 nS
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Pages | Pages 1 | ||
Télécharger | [ PZT2907A ] |
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