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PDF RT9624C Data sheet ( Hoja de datos )
| Número de pieza | RT9624C | |
| Descripción | Single Phase Synchronous Rectified Buck MOSFET Driver | |
| Fabricantes | Richtek | |
| Logotipo |  |
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®
RT9624C
Single Phase Synchronous Rectified Buck MOSFET Driver
General Description
The RT9624C is a high frequency, synchronous rectified,
single phase MOSFET driver designed for normal MOSFET
driving applications and high performance CPU VR driving
capabilities.
The RT9624C can be supplied from 4.5V to 13.2V. The
applicable power stage VIN range is from 5V to 24V. The
RT9624C also builds in an internal power switch to replace
external bootstrap diode.
The RT9624C can support switching frequency efficiently
up to 500kHz. The RT9624C has both the UGATE and
LGATE driving circuits for synchronous rectified DC/DC
converter applications. The shoot through protection
mechanism is designed to prevent shoot through between
high side and low side power MOSFETs. The RT9624C
has tri-state PWM input with shutdown and EN input
shutdown functions, which can force driver to output low
UGATE and LGATE signals.
The RT9624C comes in a small footprint with
WDFN-8SL 2x2 package.
Features
Drive Two N-MOSFETs
Shoot-Through Protection
Embedded Bootstrap Switch
Support High Switching Frequency
Fast Output Rising Time
Tri-State PWM Input for Output Shutdown
Enable Control
Small 8-Lead WDFN Package
RoHS Compliant and Halogen Free
Applications
Core Voltage Supplies for Desktop, Motherboard CPU
High Frequency Low Profile DC/DC Converters
High Current Low Voltage DC/DC Converters
Core Voltage Supplies for GFX Card
Marking Information
1C : Product Code
1CW
W : Date Code
Simplified Application Circuit
R1
12V
C1
Chip Enable
PWM
Controller
RT9624C
VCC
BOOT
R2
UGATE
EN PHASE
PWM LGATE
GND
CBOOT
R3
R4
C5 C6
VIN
Q1
L1
VOUT
R5
Q2
C2
C3 C4
Copyright ©2014 Richtek Technology Corporation. All rights reserved.
DS9624C-03 April 2014
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
1
1 page  
RT9624C
Parameter
Symbol
Test Conditions
Min Typ Max Unit
PWM Input
Maximum Input Current
PWM Floating Voltage
PWM Rising Threshold
PWM Falling Threshold
IPWM
VPWM_fl
VPWM_rth
VPWM_fth
PWM = 0V or 5V
PWM = Open
-- 160 -- A
-- 1.8 --
V
2.3 2.8 3.2 V
0.7 1.1 1.4 V
Timing
UGATE Rising Time
tUG ATE r
3nF Load
-- 25 -- ns
UGATE Falling Time
tUGATEf
3nF Load
-- 12 -- ns
LGATE Rising Time
tLG ATE r
3nF Load
-- 24 -- ns
LGATE Falling Time
tLGATEf
3nF Load
-- 10 -- ns
UGATE Propagation Delay tUGATEpdh
tUG ATE pdl
LGATE Propagation Delay tLGATEpdh
tLG ATE pdl
Output
VBOOT VPHASE = 12V
See Timing Diagram
See Timing Diagram
See Timing Diagram
-- 60 --
ns
-- 22 --
-- 30 --
ns
-- 8 --
UGATE Drive Source
UGATE Drive Sink
LGATE Drive Source
LGATE Drive Sink
RUGATEsr VBOOT VPHASE = 12V, ISource = 100mA -- 1.7 --
RUGATEsk VBOOT VPHASE = 12V, ISink = 100mA
-- 1.4 --
RLGATEsr
ISource = 100mA
-- 1.6 --
RLGATEsk ISink = 100mA
-- 1.1 --
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright ©2014 Richtek Technology Corporation. All rights reserved.
DS9624C-03 April 2014
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
5
5 Page 
RT9624C
BOOT
UGATE
PHASE
VCC
VIN
CBOOT
+
VCB
-
LGATE
GND
Figure 2. Part of Bootstrap Circuit of RT9624C
In practice, a low value capacitor CBOOT will lead to the
over charging that could damage the IC. Therefore, to
minimize the risk of overcharging and to reduce the ripple
on VCB, the bootstrap capacitor should not be smaller than
0.1μF, and the larger the better. In general design, using
1μF can provide better performance. At least one low-ESR
capacitor should be used to provide good local de-coupling.
It is recommended to adopt a ceramic or tantalum
capacitor.
Power Dissipation
To prevent driving the IC beyond the maximum
recommended operating junction temperature of 125°C,
it is necessary to calculate the power dissipation
appropriately. This dissipation is a function of switching
frequency and total gate charge of the selected MOSFET.
Figure 3 shows the power dissipation test circuit. CL and
CU are the UGATE and LGATE load capacitors,
respectively. The bootstrap capacitor value is 1μF.
CBOOT
1µF
12V
10
12V
1µF
Chip Enable
PWM
BOOT
VCC UGATE
RT9624C
PHASE
EN
PWN
LGATE
GND
2N7002
CU
3nF
2N7002
CL
3nF
20
Figure 3. Power Dissipation Test Circuit
Figure 4 shows the power dissipation of the RT9624C as
a function of frequency and load capacitance when VCC =
12V. The value of CUand CL are the same and the frequency
is varied from 100kHz to 1MHz.
Power Dissipation vs. Frequency
1000
900
800 CU = CL = 3nF
700
600
CU = CL = 2nF
500
400
300
200 CU = CL = 1nF
100
0
0
VCC = 12V
200 400 600 800
Frequency (kHz)
1000
Figure 4. Power Dissipation vs. Frequency
The operating junction temperature can be calculated from
the power dissipation curves (Figure 4). Assume VCC =
12V, operating frequency is 200kHz and CU = CL = 1nF
which emulate the input capacitances of the high side
and low side power MOSFETs. From Figure 4, the power
dissipation is 100mW. Thus, for example, with the WDFN-
8SL 2x2 package, the package thermal resistance θJA is
46°C/W. The operating junction temperature is then
calculated as :
TJ = (46°C/W x 100mW) + 25°C = 29.6°C
(11)
where the ambient temperature is 25°C.
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
Copyright ©2014 Richtek Technology Corporation. All rights reserved.
DS9624C-03 April 2014
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet RT9624C.PDF ] | |
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