|
|
Numéro de référence | TC74HC279AF | ||
Description | CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
TC74HC279AP/AF
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC279AP, TC74HC279AF
Quad S -R Latch
The TC74HC279A is a high speed CMOS QUAD S-R LATCH
fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
Each latch has an independent Q output and Set and Reset
inputs. S and R are active low. When S input is low, the Q
output goes high and when R input is low, the Q output goes
low. When both S and R are low, S takes precedence
resulting Q = low. When both of S and R are held high, Q
output doesn’t change.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
• High speed: tpd = 12 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 2 μA (max) at Ta = 25°C
• High noise immunity: VNIH = VNIL = 28% VCC (min)
• Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
• Balanced propagation delays: tpLH ∼− tpHL
• Wide operating voltage range: VCC (opr) = 2 to 6 V
• Pin and function compatible with 74LS279
Pin Assignment
TC74HC279AP
TC74HC279AF
Weight
DIP16-P-300-2.54A
SOP16-P-300-1.27A
: 1.00 g (typ.)
: 0.18 g (typ.)
Start of commercial production
1988-05
1 2014-03-01
|
|||
Pages | Pages 8 | ||
Télécharger | [ TC74HC279AF ] |
No | Description détaillée | Fabricant |
TC74HC279AF | CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | Toshiba |
TC74HC279AP | CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |