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PDF IS49NLC36800 Data sheet ( Hoja de datos )

Número de pieza IS49NLC36800
Descripción Common I/O RLDRAM 2 Memory
Fabricantes Integrated Silicon Solution 
Logotipo Integrated Silicon Solution Logotipo



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No Preview Available ! IS49NLC36800 Hoja de datos, Descripción, Manual

IS49NLC93200,IS49NLC18160,IS49NLC36800
288Mb (x9, x18, x36) Common I/O RLDRAM® 2 Memory
FEATURES
ADVANCED INFORMATION
JUNE 2012
533MHz DDR operation (1.067 Gb/s/pin data
rate)
38.4Gb/s peak bandwidth (x36 at 533 MHz
clock frequency)
Reduced cycle time (15ns at 533MHz)
32ms refresh (8K refresh for each bank; 64K
refresh command must be issued in total each
32ms)
8 internal banks
Non-multiplexed addresses (address
multiplexing option available)
SRAM-type interface
Programmable READ latency (RL), row cycle
time, and burst sequence length
Balanced READ and WRITE latencies in order to
optimize data bus utilization
Data mask signals (DM) to mask signal of
WRITE data; DM is sampled on both edges of
DK.
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and
output data clock signals
Data valid signal (QVLD)
HSTL I/O (1.5V or 1.8V nominal)
25-60Ω matched impedance outputs
2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O
On-die termination (ODT) RTT
IEEE 1149.1 compliant JTAG boundary scan
Operating temperature:
Commercial
(TC = 0° to +95°C; TA = 0°C to +70°C),
Industrial
(TC = -40°C to +95°C; TA = -40°C to +85°C)
OPTIONS
Package:
144-ball FBGA (leaded)
144-ball FBGA (lead-free)
Configuration:
32Mx9
16Mx18
8Mx36
Clock Cycle Timing:
Speed Grade
-18
tRC 15
tCK 1.875
-25E
15
2.5
-25 -33 -5
20 20 20
2.5 3.3
5
Unit
ns
ns
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
RLDRAM® is a registered trademark of Micron Technology, Inc.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
1

1 page




IS49NLC36800 pdf
IS49NLC93200,IS49NLC18160,IS49NLC36800
1.4 Ball Descriptions
Symbol
A*
BA*
CK, CK#
Type
Input
Input
Input
Description
Address inputs: Defines the row and column addresses for READ and WRITE operations. During a MODE
REGISTER SET, the address inputs define the register settings. They are sampled at the rising edge of
CK.
Bank address inputs: Selects to which internal bank a command is being applied to.
Input clock: CK and CK# are differential input clocks. Addresses and commands are latched on the rising
edge of CK. CK# is ideally 180 degrees out of phase with CK.
CS#
Input
Chip select: CS# enables the command decoder when LOW and disables it when HIGH. When the
command decoder is disabled, new commands are ignored, but internal operations continue.
DQ*
DK*, DK*#
DM
TCK
TMS,TDI
WE#, REF#
VREF
ZQ
QK*, QK*#
QVLD
TDO
VDD
VDDQ
VEXT
VSS
VSSQ
VTT
A21
A22
DNU
NF
I/O
Input
Input
Input
Input
Input
Input
I/O
Output
Output
Output
Supply
Supply
Supply
Supply
Supply
Supply
-
-
-
-
Data input: The DQ signals form the data bus. During READ commands, the data is referenced to both
edges of QK*. During WRITE commands, the data is sampled at both edges of DK.
Input data clock: DK* and DK*# are the differential input data clocks. All input data is referenced to
both edges of DK*. DK*# is ideally 180 degrees out of phase with DK*. For the x36 device, DQ0–DQ17
are referenced to DK0 and DK0# and DQ18–DQ35 are referenced to DK1 and DK1#. For the x9 and x18
devices, all DQ* are referenced to DK and DK#. All DK* and DK*# pins must always be supplied to the
device.
Input data mask: The DM signal is the input mask signal for WRITE data. Input data is masked when DM
is sampled HIGH. DM is sampled on both edges of DK (DK1 for the x36 configuration). Tie signal to
ground if not used.
IEEE 1149.1 clock input: This ball must be tied to VSS if the JTAG function is not used.
IEEE 1149.1 test inputs: These balls may be left as no connects if the JTAG function is not used.
Command inputs: Sampled at the positive edge of CK, WE# and REF# define (together with CS#) the
command to be executed.
Input reference voltage: Nominally VDDQ/2. Provides a reference voltage for the input buffers.
External impedance (25–60Ω): This signal is used to tune the device outputs to the system data bus
impedance. DQ output impedance is set to 0.2 × RQ, where RQ is a resistor from this signal to ground.
Connecting ZQ to GND invokes the minimum impedance mode.
Output data clocks: QK* and QK*# are opposite polarity, output data clocks. They are free running, and
during READs, are edge-aligned with data output from the memory. QK*# is ideally 180 degrees out of
phase with QK*. For the x36 device, QK0 and QK0# are aligned with DQ0-DQ17, and QK1 and QK1# are
aligned with DQ18-DQ35. For the x18 device, QK0 and QK0# are aligned with DQ0-DQ8, while QK1 and
QK1# are aligned with Q9-Q17. For the x9 device, all DQs are aligned with QK0 and QK0#.
Data valid: The QVLD pin indicates valid output data. QVLD is edge-aligned with QK* and QK*#.
IEEE 1149.1 test output: JTAG output. This ball may be left as no connect if the JTAG function is not
used.
Power supply: Nominally, 1.8V.
DQ power supply: Nominally, 1.5V or 1.8V. Isolated on the device for improved noise immunity.
Power supply: Nominally, 2.5V.
Ground.
DQ ground: Isolated on the device for improved noise immunity.
Power supply: Isolated termination supply. Nominally, VDDQ/2.
Reserved for future use: This signal is internally connected.
Reserved for future use: This signal is not connected and can be connected to ground.
Do not use: These balls may be connected to ground. Note that if ODT is enabled, these pins are High-Z.
No function: These balls can be connected to ground.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
5

5 Page





IS49NLC36800 arduino
IS49NLC93200,IS49NLC18160,IS49NLC36800
4. AC timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or the crossing point for
CK/CK#), and parameters specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals
used to test the device is 2V/ns in the range between VIL(AC) and VIH(AC).
5. The AC and DC input level specifications are as defined in the HSTL Standard (i.e. the receiver will effectively switch as a result of the signal crossing the AC input
level, and will remain in that state as long as the signal does not ring back above[below] the DC input LOW[HIGH] level).
6. The CK/CK# input reference level (for timing referenced to CK/CK#) is the point at which CK and CK# cross. The input reference level for signal other than CK/CK#
is VREF.
7. CK and CK# input slew rate must be 2V/ns (4V/ns if measured differentially).
8. VID is the magnitude of the difference between the input level on CK and input level on CK#.
9. The value of VIX is expected to equal VDDQ/2 of the transmitting device and must track variations in the DC level of the same.
10. CK and CK# must cross within the region.
11. CK and CK# must meet at least VID(DC) (MIN.) when static and centered on VDDQ/2.
12. Minimum peak-to-peak swing.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
11

11 Page







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