DataSheetWiki


IS49NLC18320A fiches techniques PDF

Integrated Silicon Solution - Common I/O RLDRAM 2 Memory

Numéro de référence IS49NLC18320A
Description Common I/O RLDRAM 2 Memory
Fabricant Integrated Silicon Solution 
Logo Integrated Silicon Solution 





1 Page

No Preview Available !





IS49NLC18320A fiche technique
IS49NLC96400A, IS49NLC18320A, IS49NLC36160A
576Mb (64Mbx9, 32Mbx18, 18Mbx36)
Common I/O RLDRAM2 Memory
ADVANCED INFORMATION
SEPTEMBER 2014
FEATURES
533MHz DDR operation (1.067 Gb/s/pin data rate)
38.4Gb/s peak bandwidth (x36 at 533 MHz clock
frequency)
Reduced cycle time (15ns at 533MHz)
32ms refresh (16K refresh for each bank; 128K
refresh command must be issued in total each 32ms)
8 internal banks
Non-multiplexed addresses (address multiplexing
option available)
SRAM-type interface
Programmable READ latency (RL), row cycle time,
and burst sequence length
Balanced READ and WRITE latencies in order to
optimize data bus utilization
Data mask signals (DM) to mask signal of WRITE
data; DM is sampled on both edges of DK.
OPTIONS
Package:
144-ball FBGA (leaded)
144-ball FBGA (lead-free)
Configuration:
64Mx9
32Mx18
16Mx36
Clock Cycle Timing:
Speed Grade
-18
tRC 15
tCK 1.875
-25E
15
2.5
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and
output data clock signals
Data valid signal (QVLD)
HSTL I/O (1.5V or 1.8V nominal)
25-60Ω matched impedance outputs
2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O
On-die termination (ODT) RTT
IEEE 1149.1 compliant JTAG boundary scan
Operating temperature:
Commercial
(TC = 0° to +95°C )
Industrial
(TC = -40°C to +95°C; TA = -40°C to +85°C)
-25 -33 Unit
20 20 ns
2.5 3.3 ns
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at
any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein.
Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for
products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the
product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not
authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
RLDRAMis a registered trademark of Micron Technology, Inc.
Integrated Silicon Solution, Inc. www.issi.com
Rev. 00A, 9/10/2014
1

PagesPages 30
Télécharger [ IS49NLC18320A ]


Fiche technique recommandé

No Description détaillée Fabricant
IS49NLC18320 Common I/O RLDRAM 2 Memory Integrated Silicon Solution
Integrated Silicon Solution
IS49NLC18320A Common I/O RLDRAM 2 Memory Integrated Silicon Solution
Integrated Silicon Solution

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche